| 摘要 |
According to one embodiment, a semiconductor light emitting device includes a stacked body (15), first and second electrodes (40, 50). The stacked body (15) includes a light emitting layer (30). The first and second electrodes (40, 50) are provided on the stacked body (15). The device further includes an insulating layer (70) covering the stacked body (15), a first conversion electrode (43) electrically connected to the first electrode (40), a second conversion electrode (53) electrically connected to the second electrode (50), and a light blocking body (57) covering a side surface of the stacked body (15). The first conversion electrode (43), the second conversion electrode (53), and the light blocking body (57) include, in a portion contacting with the insulating layer (70), a member with a reflectance of 80 percent or more for light emitted from the light emitting layer (30). |
