发明名称 |
OXIDE TFT ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE |
摘要 |
Embodiments of the present invention provide an oxide TFT array substrate and a method for manufacturing the same, and an electronic device comprising the same. In the embodiment of the method, an active layer and a stop layer are sequentially formed on a gate insulating layer and are patterned twice by a single-step continuous etch method. The embodiments of the present invention can avoid damages upon the surface and characteristics of an oxide semiconductor film during the processes such as removal, cleaning and the like, so the characteristics and yield of products can be effectively enhanced, and the costs for research and preparation are reduced. |
申请公布号 |
EP2743977(A4) |
申请公布日期 |
2015.03.25 |
申请号 |
EP20120794159 |
申请日期 |
2012.08.20 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
YUAN, GUANGCAI;WU, ZHONGYUAN;DUAN, LIYE |
分类号 |
H01L21/77;H01L27/12;H01L29/49;H01L29/786 |
主分类号 |
H01L21/77 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|