Power semiconductor device

摘要

The present invention relates to a power semiconductor device which comprises: a drift layer of a first conductivity type where a trench gate is formed; a well region of a second conductivity type formed to contact with the trench gate on an upper part of the drift layer; a source region of a first conductivity type formed to contact with the trench gate on an upper part of the well region; and a device protection region formed lower that the height of a lowest part of the source region in a height direction.