| 摘要 |
A method for manufacturing a semiconductor element of the present invention, has: a laser irradiation step of focusing a pulsed laser beam inside of a substrate constituting a wafer, thereby forming a plurality of isolated processed portions along an intended dividing line inside of the substrate, and creating a fissure that runs from the processed portions at least to the surface of the substrate and links adjacent processed portions; and a wafer division step of dividing the wafer along the intended dividing line. |
