发明名称 |
METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE |
摘要 |
An object of the present invention is to provide a production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with a small off-angle. According to the present invention, in the production process of an epitaxial silicon carbide single crystal substrate having a high-quality silicon carbide single crystal thin film reduced in the surface defect and the like on a silicon carbide single crystal substrate with an off-angle of 4° or less, pretreatment etching to a depth of 0.1 to 1 µm is performed at a temperature of 1,550 to 1,650°C by flowing a gas containing silicon and chlorine together with a hydrogen gas such that the silicon atom concentration becomes from 0.0001 to 0.01% based on hydrogen atoms in the hydrogen gas, and thereafter, an epitaxial layer is formed. |
申请公布号 |
EP2642001(A4) |
申请公布日期 |
2015.03.25 |
申请号 |
EP20110841299 |
申请日期 |
2011.11.15 |
申请人 |
NIPPON STEEL & SUMITOMO METAL CORPORATION |
发明人 |
AIGO, TAKASHI;TSUGE, HIROSHI;KATSUNO, MASAKAZU;FUJIMOTO, TATSUO;YASHIRO, HIROKATSU |
分类号 |
C30B29/36;C23C16/42;C30B25/02;C30B25/18;C30B25/20;H01L21/02;H01L21/205 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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