发明名称 Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process
摘要 <p>The present invention provides a silicon-containing surface modifier containing one or more repeating units each represented by the following general formula (A), or one or more partial structures each represented by the following general formula (C): It is aimed at providing a resist lower layer film which is usable for a resist pattern formed of a hydrophilic organic compound to be obtained in a negative development.</p>
申请公布号 EP2628745(B1) 申请公布日期 2015.03.25
申请号 EP20130000600 申请日期 2013.02.06
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OGIHARA, TSUTOMU;UEDA, TAKAFUMI;TANEDA, YOSHINORI
分类号 C07F7/18;C08G77/14;C08L83/06;C09D5/00;C09D183/06;G03F7/075;G03F7/11;G03F7/20;G03F7/40;H01L21/306 主分类号 C07F7/18
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