| 摘要 |
<p>A light emitting device is disclosed. The light emitting device includes a substrate (210), a first conductive type semiconductor layer (220) disposed on the substrate, an active layer (230) disposed on one part of the first conductive type semiconductor layer, a second conductive type semiconductor layer (250) disposed on the active layer, a first electrode (260) disposed on the second conductive type semiconductor layer, and a second electrode (270) disposed on the other part of the first conductive type semiconductor layer, wherein a trench (280) is formed at a portion of the second conductive type semiconductor layer, the active layer or the first conductive type semiconductor layer so that the trench is disposed under the first electrode.
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