| 摘要 |
1,139,749. Field effects transistors. SIEMENS A.G. 30 June, 1966 [1 July, 1965], No. 29340/66. Heading H1K. In a field effect transistor with an insulated gate comprising a layer of ferro-electric material, the layer and semi-conductor body are formed as a single crystalline body, Either or both the layer and body may be monocrystalline. In Fig. 4, a tantalum or molybdenum electrode 30 is provided with a ferro-electric layer 29 by vapour deposition of barium titanate with suitable addition of lead titanate or lead titanate stainate which allows for epitaxial deposition of the semi-conductor layer 32 consisting of silicon. Planar technique is used to provide region 25 of opposite conductivity type leaving a channel between source and drain electrodes 27 and 28. Alternatively the ferro-electric material may be deposited on the surface of a semi-conductor body, and the semi-conductor material may consist of cadmium sulphide or cadmium tellurode or a mixed crystal of AIII BV compounds such as gallium arsenide and gallium antimonide. |
