| 摘要 |
<p>The present invention relates to a non-contact heating type gene amplifier and, more specifically, to a non-contact heating type gene amplifier comprising a chip accommodating a sample including a gene to be amplified; a supporting plate which safely places the chip at a designated place on the upper surface; a laser module which irradiates a part of the chip placed on the designated location of the supporting plate with laser in a predetermined wavelength band; a temperature sensor which is included in one side of the laser module and outputs the temperature by sensing the temperature of the part of the chip; a height adjusting tool which is combined with the supporting plate and selectively adjusts the height of the laser module according to performance number of the temperature sensor, and in which the laser module is installed; and a main control unit which is electrically connected to the laser module, temperature sensor, and height adjusting tool, and controls output of the laser module and elevation and descend of the height adjusting tool based on the value output from the temperature sensor. The present invention provides the non-contact heating type gene amplifier using radiant heat comprising the following steps: irradiating a part of the chip, in which a sample comprising a gene which will be amplified is accommodated, with laser; emitting radiant heat while the irradiated laser is absorbed by a heat sink installed in the lower part of the chip; amplifying the gene (nucleic acid) using radiant heat; and controlling temperature of radiant heat by controlling the height and laser output of the laser module which irradiates laser.</p> |
