| 摘要 |
<p>A light emitting device according to an embodiment of the present invention includes: a conductive substrate, a first semiconductor layer and a second semiconductor layer which are arranged on the conductive substrate, an active layer which is located between the first semiconductor layer and the second semiconductor layer and generates light, a second electrode which is electrically connected to the second semiconductor layer, a first electrode which upwardly reflects the light generated from the active layer and is electrically connected to the first semiconductor layer, and a current blocking unit which is arranged on the first electrode to overlap at least the second electrode in a vertical direction. The thicknesses of the current blocking unit and the first semiconductor layer satisfy the following constructive interference condition. Wherein, the constructive interference condition is 2(φ1+φ2)+φ3 = 2Nπ±π/2 (φn= 2πnd/λ). Theφ1 is a phase difference to pass the first semiconductor layer. Theφ2 is a phase difference to pass the current blocking unit. Theφ3 is a phase difference by a reflection on a meal reflection layer. The N is an integer. The n is a refractive index of each layer. Theλis a wavelength of the generated light. The d is the thickness of each layer.</p> |
