| 摘要 |
1,134,998. Semi-conductor devices. MARCONI CO. Ltd. 24 Jan., 1968 [4 April, 1967], No. 15377/67. Heading H1K. Breakdown of the gate insulation in an insulated gate field effect transistor is prevented by mounting the transistor in a housing containing a low-pressure gas filling, the ionization voltage of which is below the breakdown voltage of the insulation. The filling is preferably a mixture of an inert gas and a radioactive gas, e.g. neon and tritium. Several transistors may be mounted in the same housing, the ionization voltage of the filling being below the lowest gate insulation breakdown voltage. At operating voltages the gas is not ionized and acts as a normal insulator. |
