发明名称 MEMS resonator with improved amplitude saturation
摘要 <p>A resonator has a main resonator body (R) and a secondary resonator structure (A, D). The second resonator structure is coupled to nodal points of the main resonator body with respect to the main resonance mode. The resonator body has a desired mode of vibration of the resonator alone, and a parasitic mode of vibration, wherein the parasitic mode comprises vibration of the resonator body and the secondary resonator structure as a composite body. In this way, unwanted vibrational modes are quenched by the second suspended structure. This suppresses the quality factor of parasitic modes by coupling the anchor arrangement to the resonator for those modes. In this way, the autoparametric resonance which limits the vibration amplitude is shifted so that the stable vibration amplitude of the resonator is increased.</p>
申请公布号 EP2713509(B1) 申请公布日期 2015.03.25
申请号 EP20120186407 申请日期 2012.09.27
申请人 NXP B.V. 发明人 VAN DER AVOORT, CASPER;JANSMAN, ANDREAS;LANDER, ROBERT
分类号 H03H9/02;H03B1/00;H03H9/24 主分类号 H03H9/02
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