发明名称 |
PROCESS FOR PRODUCING EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE AND EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE OBTAINED BY THE PROCESS |
摘要 |
Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T 0 ) and a set growth temperature (T 2 ) which are respectively lower and higher than a growth temperature (T 1 ) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed. |
申请公布号 |
EP2557205(A4) |
申请公布日期 |
2015.03.25 |
申请号 |
EP20110766043 |
申请日期 |
2011.04.07 |
申请人 |
NIPPON STEEL & SUMITOMO METAL CORPORATION |
发明人 |
AIGO, TAKASHI;TSUGE, HIROSHI;HOSHINO, TAIZO;FUJIMOTO, TATSUO;KATSUNO, MASAKAZU;NAKABAYASHI, MASASHI;YASHIRO, HIROKATSU |
分类号 |
C30B29/36;C23C16/42;C30B25/10;C30B25/16;H01L21/02;H01L21/205 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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