| 摘要 |
<p>An embodiment of the present invention relates to a light-emitting device, a method for manufacturing of the same, a light-emitting device package, and a lighting system. According to the embodiment of the present invention, the light-emitting device includes: a first conductive semiconductor layer; an active layer arranged on the first conductive semiconductor layer, and containing a plurality of quantum well layers and a plurality of quantum wall layers; an electron-blocking structure layer arranged on the active layer; and a second conductive semiconductor layer arranged on the electron-blocking structure layer. The electron-blocking structure layer contains a plurality of AlGaN-based semiconductor layers whose individual band gap is wider than the band gap of the quantum wall layer in the active layer. The middle layer of the semiconductor layers has a band gap narrower than the band gap of neighboring AlGaN-based semiconductor layers, and includes a well structure.</p> |
