| 摘要 |
The present disclosure provides a photoelectric conversion element comprising a photoelectric conversion layer laminated a first metal layer, a first semiconductor layer, a second semiconductor layer and a second metal layer. The first or second metal layer contains a porous metal thin film, and the porous metal thin film has plural openings penetrating through the film. Each of the openings has an area of 80 nm 2 to 0.8 µm 2 inclusive on average, and the porous metal thin film has a thickness of 2 nm to 200 nm inclusive. The second semiconductor layer has a smaller band gap than the first semiconductor layer, has polarity opposite to that of the first semiconductor layer, and is positioned within 5 nm from the porous metal thin film. |
