| 摘要 |
A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head. |
| 主权项 |
1. A spin transfer oscillator (STO) structure in a spintronic device, comprising:
(a) a composite seed layer comprising at least a lower Ta layer formed on a substrate and a metal (M1) layer having a fcc(111) or hcp(001) crystal structure contacting the lower Ta layer; (b) a field generation layer (FGL) that has an (A1/A2)Y/FeCo alloy configuration where A1 is one of Co, CoFe, or CoFeR wherein R is one of Ru, Rh, Pd, Ti, Zr, Hf, Ni, Cr, Mg, Mn, or Cu, and A2 is one of Ni, NiCo, and NiFe, and Y is a number of laminations, the FeCo alloy includes one or more of Al, Ge, Si, Ga, C, Se, and Sn and contacts a bottom surface of a non-magnetic spacer; (c) the non-magnetic spacer; (d) a laminated spin injection layer (SIL) with high perpendicular magnetic anisotropy (PMA) and with a (A1/A2)X configuration contacting a top surface of the non-magnetic spacer wherein x is in a range from 5 to 50, and a thickness (t2) of each A2 magnetic layer is greater than a thickness (t1) of each A1 magnetic layer; and (e) a capping layer contacting a top surface of the SIL. |
