发明名称 |
Thin-film transistor substrate and method for manufacturing the same |
摘要 |
A thin-film transistor (TFT) substrate includes a base substrate, a test pad and a test pad line. The base substrate includes a display area including a data line and a TFT, a peripheral area including a common voltage line, and a test area disposed outside of the peripheral area. The test pad is disposed in the test area and electrically connected to the data line. The test pad line connects the data line with the test pad and crosses the common voltage line. |
申请公布号 |
US8988627(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US201213431465 |
申请日期 |
2012.03.27 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Tae Chang-Il;Yoon Yeo-Geon;Kim Swae-Hyun;Park Jae-Hwa |
分类号 |
G02F1/1333;H01L27/12;G09G3/00;H01L21/66;G02F1/1362;G02F1/167 |
主分类号 |
G02F1/1333 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A thin-film transistor (TFT) substrate, comprising:
a base substrate, comprising:
a display area comprising a data line and a TFT,a peripheral area comprising a common voltage line, anda test area disposed outside of the peripheral area; a test pad disposed in the test area and electrically connected to the data line; a test pad line connecting the data line with the test pad and crossing the common voltage line; and a short point disposed on the common voltage line and spaced apart from the test pad line, wherein the short point is disposed between the test pad and another test pad. |
地址 |
Yongin KR |