| 发明名称 | Method for operating memory device and apparatuses performing the method | ||
| 摘要 | According to example embodiments, a method for operating a memory device includes receiving an on-die termination (ODT) signal through an ODT pin, and issuing a command or controlling an ODT circuit according to the ODT signal. | ||
| 申请公布号 | US8988101(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201213617395 | 申请日期 | 2012.09.14 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Song In Dal;Choi Jung Hwan;Yang Yun Seok |
| 分类号 | H03K17/16;H03K19/003;G11C7/10;H03K19/00 | 主分类号 | H03K17/16 |
| 代理机构 | Harness, Dickey & Pierce, PLC | 代理人 | Harness, Dickey & Pierce, PLC |
| 主权项 | 1. A method for operating a memory device comprising: receiving an ODT signal through an on-die termination (ODT) pin; and issuing a command or controlling an ODT circuit according to the ODT signal, wherein the command is a refresh command, or the command is a pre-charge all banks command, or the command is issued when the memory device is powered down. | ||
| 地址 | KR | ||