发明名称 |
Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications |
摘要 |
A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer. |
申请公布号 |
US8987847(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US201414244937 |
申请日期 |
2014.04.04 |
申请人 |
Headway Technologies, Inc. |
发明人 |
Jan Guenole;Tong Ru-Ying;Wang Yu-Jen |
分类号 |
H01L29/82;H01L43/00;H01L29/34;H01L29/74;H01L31/111;H01L43/12;H01L43/08;H01L43/10;H01L43/02;G11C11/16;H01F10/30;H01F10/32;H01L29/66;H01F41/30 |
主分类号 |
H01L29/82 |
代理机构 |
Saile Ackerman LLC |
代理人 |
Saile Ackerman LLC ;Ackerman Stephen B. |
主权项 |
1. A magnetic tunnel junction (MTJ), comprising:
(a) a seed layer formed on a substrate; (b) a free layer comprising a laminated stack that contacts a top surface of the seed layer, the laminated layer has intrinsic perpendicular magnetic anisotropy (PMA) and comprises a (Co/X)n or (CoX)n structure wherein X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, and Si, CoX is a disordered alloy, and n is the number of laminates in the stack; (c) a tunnel barrier layer formed on the free layer; (d) a reference layer formed on the tunnel barrier layer; and (e) and a capping layer formed on the reference layer. |
地址 |
Milpitas CA US |