Group V doping of GaAs-based layers to improve radiation tolerance of solar cells

摘要

Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.

主权项

1. A method for repairing radiation-induced damage to photovoltaic cells comprising the steps of:
providing a photovoltaic cell made by sequentially growing semiconductor alloys that are lattice-matched to a Ge substrate; providing at least one subcell layer comprising a GaAs-based material having a lattice and a first current and voltage retention; providing at least one subcell layer material comprising an amount of group-V element, said group-V element subcell layer located proximate to the GaAs-based subcell layer; doping the GaAs-based subcell with a group-V element dopant; and providing an amount of the group-V element for migration into the GaAs-based material lattice substantially immediately after exposure of the photovoltaic cell to radiation.