| 摘要 |
<p>Disclosed is a doping method, comprising: forming an N+ doped layer in a surface of an N-type substrate; forming a mask on the surface of the N-type substrate, wherein a region that is not covered by the mask is an open region; etching the N+ doped layer to completely remove the N+ doped layer under the open region and expose the N-type substrate; forming a P+ doped region in the N-type substrate under the open region through ion injection, wherein the P+ doped region does not contact a non-etched N+ doped layer; removing the mask to obtain a PN structure comprising the N+ doped region and the P+ doped region, wherein the non-etched N+ doped layer is the N+ doped region. Also disclosed are a PN structure, a solar cell, and a fabrication method therefor. Through the present invention, the process steps are simplified, the purchase of a photo-etching machine and the use of multiple mask templates are not required, the problem of calibration of the mask templates does not exist, and the fabrication cost of the PN structure and the solar cell is reduced.</p> |
