High brightness electron gun, system using the same, and method of operating thereof

摘要

A charged particle beam source device adapted for generating a charged particle beam is provided. The charged particle beam source device includes an emitter tip adapted for providing charged particles. Furthermore, an extractor electrode having an aperture opening is provided for extracting the charged particles from the emitter tip. An aperture angle of the charged particle beam is 2 degrees or below the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is a range from 0.1 mm to 2 mm.

主权项

1. A wafer imaging system configured for imaging a wafer, comprising:
an electron beam source device configured for generating a primary electron beam for a wafer imaging system, the device comprising:
a gun chamber, wherein the gun chamber can be evacuated;an emitter tip adapted for providing electrons wherein the emitter tip is provided as a cold field emitter or thermally assisted cold field emitter within the gun chamber; andan extractor electrode having an aperture opening and adapted for extracting the electrons from the emitter tip, wherein the extractor electrode is provided in the gun chamber,wherein an aperture angle of the beam source device is 2 degrees or below, the aperture angle being defined by a width of the aperture opening and a distance between the emitter tip and the extractor electrode, wherein the distance between the emitter tip and the extractor electrode is in a range from about 0.1 mm to about 2 mm; andfurther comprising a suppressor electrode arranged concentrically around the emitter tip within the gun chamber, the emitter tip Protruding through the suppressor electrode; the system further comprises: an objective lens configured for focusing the electron beam on the wafer; at least one condenser lens provided between the emitter tip and the objective lens; and a scanning deflector arrangement for scanning the electron beam over the wafer to generate the image of the wafer.