发明名称 Light emitting device and method of driving the light emitting device
摘要 A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.
申请公布号 US8988324(B2) 申请公布日期 2015.03.24
申请号 US201414186600 申请日期 2014.02.21
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Osame Mitsuaki;Anzai Aya;Tanada Yoshifumi;Miyagawa Keisuke;Seo Satoshi;Yamazaki Shunpei
分类号 G09G3/30;G09G3/32;H01L33/00 主分类号 G09G3/30
代理机构 Husch Blackwell LLP 代理人 Husch Blackwell LLP
主权项 1. A light emitting device comprising: a pixel portion comprising: a source signal line;a first gate signal line;a second gate signal line;a first wiring;a second wiring;a light emitting element;a first transistor, a gate of the first transistor being directly connected to the first gate signal line, and one of a source and a drain of the first transistor being directly connected to the source signal line;a second transistor, one of a source and a drain of the second transistor being directly connected to the first wiring, and the other of the source and the drain of the second transistor being electrically connected to the light emitting element; anda third transistor, a gate of the third transistor being directly connected to the second gate signal line, one of a source and a drain of the third transistor being directly connected to the second wiring, the other of the source and the drain of the third transistor being directly connected to the light emitting element, wherein the first wiring intersects with the first gate signal line and the second gate signal line.
地址 JP