发明名称 Semiconductor device
摘要 A semiconductor device includes a substrate having a plurality of active regions defined by a device isolation region, a plurality of conductive patterns on the plurality of active regions, each of the conductive patterns having side walls, a conductive line that faces the side walls of the conductive patterns with an air spacer therebetween on the active regions, the conductive line extending in a first direction, and a first insulating film covering the side walls of the conductive patterns between the air spacer and the conductive pattern. A lower portion of the first insulating film that is near the substrate protrudes toward the air spacer.
申请公布号 US8987860(B2) 申请公布日期 2015.03.24
申请号 US201314103195 申请日期 2013.12.11
申请人 Samsung Electronics Co., Ltd. 发明人 Song Bo-young;Yun Cheol-ju;Ko Seung-hee
分类号 H01L29/06;H01L21/764;H01L49/02;H01L27/108 主分类号 H01L29/06
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A semiconductor device, comprising: a substrate having a plurality of active regions defined by a device isolation region; a plurality of conductive patterns on the plurality of active regions, each of the conductive patterns having side walls; a conductive line that faces the side walls of the conductive patterns with an air spacer therebetween on the active regions, the conductive line extending in a first direction; and a first insulating film covering the side walls of the conductive patterns between the air spacer and the conductive pattern, wherein a lower portion of the first insulating film that is near the substrate protrudes toward the air spacer, and wherein a portion of the air spacer that is adjacent to the lower portion of the first insulating film has a lesser width in a second direction that is perpendicular to the first direction than a remaining portion of the air spacer.
地址 Suwon-si, Gyeonggi-do KR
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