发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a substrate having a plurality of active regions defined by a device isolation region, a plurality of conductive patterns on the plurality of active regions, each of the conductive patterns having side walls, a conductive line that faces the side walls of the conductive patterns with an air spacer therebetween on the active regions, the conductive line extending in a first direction, and a first insulating film covering the side walls of the conductive patterns between the air spacer and the conductive pattern. A lower portion of the first insulating film that is near the substrate protrudes toward the air spacer. |
申请公布号 |
US8987860(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US201314103195 |
申请日期 |
2013.12.11 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Song Bo-young;Yun Cheol-ju;Ko Seung-hee |
分类号 |
H01L29/06;H01L21/764;H01L49/02;H01L27/108 |
主分类号 |
H01L29/06 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A semiconductor device, comprising:
a substrate having a plurality of active regions defined by a device isolation region; a plurality of conductive patterns on the plurality of active regions, each of the conductive patterns having side walls; a conductive line that faces the side walls of the conductive patterns with an air spacer therebetween on the active regions, the conductive line extending in a first direction; and a first insulating film covering the side walls of the conductive patterns between the air spacer and the conductive pattern, wherein a lower portion of the first insulating film that is near the substrate protrudes toward the air spacer, and wherein a portion of the air spacer that is adjacent to the lower portion of the first insulating film has a lesser width in a second direction that is perpendicular to the first direction than a remaining portion of the air spacer. |
地址 |
Suwon-si, Gyeonggi-do KR |