Photodiode having N-type and intrinsic amorphous IGZO layers

摘要

A photodiode, a light sensor and a fabricating method thereof are disclosed. An n-type semiconductor layer and an intrinsic semiconductor layer of the photodiode respectively comprise n-type amorphous indium gallium zinc oxide (IGZO) and intrinsic IGZO. The oxygen content of the intrinsic amorphous IGZO is greater than the oxygen content of the n-type amorphous IGZO. A light sensor comprise the photodiode is also disclosed.

主权项

1. A photodiode, comprising:
a substrate; a lower electrode disposed on the substrate; a N-type semiconductor layer disposed on the lower electrode, wherein the N-type semiconductor layer comprises a N-type amorphous indium gallium zinc oxide (IGZO) layer; an intrinsic semiconductor layer disposed on the N-type semiconductor layer, wherein the intrinsic semiconductor layer comprises an intrinsic amorphous indium gallium zinc oxide (IGZO) layer, and the oxygen content of the intrinsic amorphous IGZO layer is higher than the oxygen content of the N-type amorphous IGZO layer; and an upper electrode disposed on the intrinsic semiconductor layer.