FinFET with a buried semiconductor material between two fins

摘要

A fin structure for a fin field effect transistor (FinFET) device is provided. The device includes a substrate, a first semiconductor material disposed on the substrate, a shallow trench isolation (STI) region disposed over the substrate and formed on opposing sides of the first semiconductor material, and a second semiconductor material forming a first fin and a second fin disposed on the STI region, the first fin spaced apart from the second fin by a width of the first semiconductor material. The fin structure may be used to generate the FinFET device by forming a gate layer formed over the first fin, a top surface of the first semiconductor material disposed between the first and second fins, and the second fin.

主权项

1. A fin structure for a fin field effect transistor (FinFET) device, comprising:
a substrate comprising a substrate material; a first semiconductor material disposed on the substrate, the first semiconductor material different than the substrate material; a shallow trench isolation (STI) region abutting the substrate and formed on opposing sides of the first semiconductor material; a second semiconductor material forming a first fin and a second fin disposed on the STI region, the first fin spaced apart from the second fin by a width of the first semiconductor material; and a dielectric material interposed between the first fin and the second fin.