Magnetic tunneling junction devices, memories, memory systems, and electronic devices

摘要

Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

主权项

1. A magnetic tunneling junction device comprising:
a first structure including a magnetic layer; a second structure including a first extrinsic perpendicular magnetization layer; a second extrinsic perpendicular magnetization layer; a first non-magnetic layer disposed on the first extrinsic perpendicular magnetization layer; a second non-magnetic layer disposed on the second extrinsic perpendicular magnetization layer; and a third non-magnetic layer disposed on the second non-magnetic layer.