Light emitting diode chip having electrode pad

摘要

Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

主权项

1. A light emitting diode (LED) chip comprising:
a semiconductor stack comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first electrode pad disposed on the second conductivity-type semiconductor layer; a first electrode extension extending from the first electrode pad, the first electrode extension connected to the first conductivity-type semiconductor layer; a second electrode pad electrically connected to the second conductivity-type semiconductor layer; a first insulation layer interposed between the first electrode pad and the second conductivity-type semiconductor layer; a second electrode extension extending from the second electrode pad; a transparent conductive layer disposed on the second conductivity-type semiconductor layer; and a current blocking layer interposed between the transparent conductive layer and the second conductivity-type semiconductor layer, the current blocking layer extending along the second electrode extension, wherein the second electrode pad and the second electrode extension are electrically connected to the second conductivity-type semiconductor layer by the transparent conductive layer.