发明名称 Memory constructions
摘要 Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors.
申请公布号 US8987698(B2) 申请公布日期 2015.03.24
申请号 US201414503081 申请日期 2014.09.30
申请人 Micron Technology, Inc. 发明人 Redaelli Andrea;Pirovano Agostino
分类号 H01L29/02;H01L45/00 主分类号 H01L29/02
代理机构 Wells St. John P.S. 代理人 Wells St. John P.S.
主权项 1. A memory construction comprising a stack which includes a bottom electrically conductive material electrically coupled with a select device, a top electrically conductive material, and a plurality of bands between the top and bottom electrically conductive materials; the bands including chalcogenide bands alternating with non-chalcogenide bands; wherein there at least two of the chalcogenide bands and at least one of the non-chalcogenide bands; and wherein one or more of the non-chalcogenide bands comprise carbon.
地址 Boise ID US