发明名称 | Memory constructions | ||
摘要 | Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors. | ||
申请公布号 | US8987698(B2) | 申请公布日期 | 2015.03.24 |
申请号 | US201414503081 | 申请日期 | 2014.09.30 |
申请人 | Micron Technology, Inc. | 发明人 | Redaelli Andrea;Pirovano Agostino |
分类号 | H01L29/02;H01L45/00 | 主分类号 | H01L29/02 |
代理机构 | Wells St. John P.S. | 代理人 | Wells St. John P.S. |
主权项 | 1. A memory construction comprising a stack which includes a bottom electrically conductive material electrically coupled with a select device, a top electrically conductive material, and a plurality of bands between the top and bottom electrically conductive materials; the bands including chalcogenide bands alternating with non-chalcogenide bands; wherein there at least two of the chalcogenide bands and at least one of the non-chalcogenide bands; and wherein one or more of the non-chalcogenide bands comprise carbon. | ||
地址 | Boise ID US |