| 发明名称 | High density memory device | ||
| 摘要 | A method of operating a memory device having a dielectric material layer, a transition metal oxide layer and a set of electrodes each formed over a substrate, includes applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to undergo a metal-insulation transition (MIT) to perform a read or write operation on memory device. | ||
| 申请公布号 | US8987693(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201213570390 | 申请日期 | 2012.08.09 |
| 申请人 | International Business Machines Corporation | 发明人 | Barwicz Tymon;Jenkins Keith A.;Guha Supratik |
| 分类号 | H01L47/00;G11C11/404;H01L49/02;G11C13/00;H01L49/00 | 主分类号 | H01L47/00 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method of operating a memory device having a dielectric material layer, a transition metal oxide layer, a first electrodes disposed directly on top of and in contact with a substrate and a second electrode formed directly on top of and in contact with the dielectric material layer, comprising: applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to undergo a metal-insulation transition (MIT) to perform a read or write operation on memory device, wherein the dielectric material layer is formed directly on top of an in contact with the transition metal oxide layer and is disposed between the transition metal oxide layer and the second electrode. | ||
| 地址 | Armonk NY US | ||