| 摘要 |
An object is to reduce the size and manufacturing cost of a photodetector. In order to reduce the area where a visible light sensor and an infrared light sensor are provided, a first photodiode that detects visible light and a second photodiode that detects infrared light are arranged to overlap with each other so that visible light is absorbed first by the first photodiode, whereby significantly little visible light enters the second photodiode. Further, the first photodiode overlapping with the second photodiode is used as an optical filter for the second photodiode. Therefore, a semiconductor layer included in the first photodiode absorbs visible light and transmits infrared light, and a semiconductor layer included in the second photodiode absorbs infrared light. |
| 主权项 |
1. A photodetector comprising:
a first sensor comprising a first photodiode, a first transistor, and a second transistor; a second sensor comprising a second photodiode, a third transistor, and a fourth transistor; and an insulating film over the second photodiode, the first transistor, the second transistor, the third transistor, and the fourth transistor, wherein the first photodiode overlaps with the second photodiode with the insulating film provided therebetween, wherein the first photodiode comprises a first semiconductor, wherein the second photodiode comprises a second semiconductor, wherein the first photodiode and the second photodiode overlap with each other, wherein a gate of the second transistor is electrically connected to a first terminal of the first transistor, wherein a gate of the fourth transistor is electrically connected to a first terminal of the third transistor, wherein a second terminal of the first transistor is electrically connected to a first electrode of the first photodiode, and wherein a second terminal of the third transistor is electrically connected to a first electrode of the second photodiode. |
