发明名称 |
Substrate processing apparatus having rotatable slot-type antenna and method of manufacturing semiconductor device using the same |
摘要 |
Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit. |
申请公布号 |
US8987645(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US201113240545 |
申请日期 |
2011.09.22 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
Ogawa Unryu;Okuno Masahisa;Akao Tokunobu;Yashima Shinji;Umekawa Atsushi;Minami Kaichiro |
分类号 |
H05B6/68;H05B6/64;H01L21/67;H01L21/687;H05B6/80 |
主分类号 |
H05B6/68 |
代理机构 |
Volpe and Koenig, P.C. |
代理人 |
Volpe and Koenig, P.C. |
主权项 |
1. A method of manufacturing a semiconductor device using a substrate processing apparatus comprising: a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate, the substrate support unit comprising a substrate support mechanism and a substrate support table wherein an upper end of the substrate support mechanism supports the substrate; a microwave supply unit including a microwave radiating unit radiating a microwave supplied from a microwave source to the substrate, wherein the microwave radiating unit supplies the microwave toward a process surface of the substrate supported by the substrate support unit while rotating; a cooling unit installed at the substrate support table; an inert gas supply unit configured to supply an inert gas into the process chamber; and a control unit configured to control the substrate support unit, the microwave supply unit, the cooling unit and the inert gas supply unit, the method comprising:
(a) placing the substrate on the substrate support unit and supplying the inert gas from the inert gas supply unit; (b) rotating the microwave radiating unit and supplying the microwave into the process chamber after supplying the inert gas; and (c) cooling down the substrate by using the cooling unit and by stopping supply of the microwave, wherein the substrate support mechanism is moved in a manner that a distance between the upper end of the substrate support mechanism and a surface of the substrate support table is a first distance while the substrate is heated by the microwave supplied in the step (b), and that the distance is a second distance shorter than the first distance while the substrate is cooled by the cooling unit in the step (c). |
地址 |
Tokyo JP |