发明名称 Group III nitride semiconductor device, production method therefor, and power converter
摘要 A method for producing a semiconductor device, includes forming a first carrier transport layer including a Group III nitride semiconductor, forming a mask on a region of the first carrier transport layer, selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer including a Group III nitride semiconductor, and selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer including a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer.
申请公布号 US8987077(B2) 申请公布日期 2015.03.24
申请号 US201314011573 申请日期 2013.08.27
申请人 Toyota Gosei Co., Ltd. 发明人 Oka Toru
分类号 H01L21/336;H01L29/66;H01L29/778;H01L29/861;H01L23/29;H01L23/31;H01L29/20;H01L29/40;H01L29/423 主分类号 H01L21/336
代理机构 McGinn IP Law Group, PLLC 代理人 McGinn IP Law Group, PLLC
主权项 1. A method for producing a semiconductor device, said method comprising: forming a first carrier transport layer comprising a Group III nitride semiconductor; forming a mask on a region of the first carrier transport layer; selectively re-growing a second carrier transport layer on an unmasked region of the first carrier transport layer, the second carrier transport layer comprising a Group III nitride semiconductor; selectively growing a carrier supply layer on the second carrier transport layer, the carrier supply layer comprising a Group III nitride semiconductor having a bandgap different from that of the Group III nitride semiconductor of the second carrier transport layer, wherein laminate structures comprising the second carrier transport layer and the carrier supply layer are formed on two separate regions of a surface of the first carrier transport layer, the two separate regions being separated by the mask; removing the mask; forming an insulating film on a region of the first carrier transport layer sandwiched between the two separate regions and also on mutually facing lateral end surfaces of the two separate laminate structures; forming a control electrode on the insulating film; and forming a channel on which electrons conduct is formed on a heterojunction interface between the second carrier transport layer and the carrier supply layer, and on a side of the second carrier transport layer.
地址 Kiyosu-Shi, Aichi-Ken JP