Methods of laser processing photoresist in a gaseous environment

摘要

Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.

主权项

1. A method of improving on a patterned product wafer at least one of an etch resistance and a line-edge roughness of a photoresist layer having a surface, comprising:
a) exposing the photoresist layer to a first process gas comprising either trimethyl aluminum (Al2(CH3)6) gas, titanium tetrachloride (TiCL4) gas or diethyl zinc ((C2H5)2Zn) gas; b) laser irradiating the photoresist layer and the first process gas to cause the first process gas to infuse into the photoresist layer, wherein the photoresist surface is raised to a temperature of between 300° C. and 500° C. with a temperature uniformity of +/−5° C.; c) removing remaining first process gas from a vicinity of the photoresist layer; d) exposing the photoresist layer to a second process gas comprising H2O; and e) laser irradiating the photoresist layer and second process gas to cause the H2O to infuse into the photoresist layer, wherein the photoresist surface is raised to a temperature of between 300° C. and 500° C. with a temperature uniformity of +/−5° C.