Method for producing optical semiconductor device

摘要

A method for producing an optical semiconductor device includes the steps of determining a wafer size to make a section arrangement including a plurality of sections in each of which the optical semiconductor device including a semiconductor mesa is formed; obtaining an in-plane distribution of a thickness of a resin layer on a wafer; obtaining a correlation between a thickness of a resin layer and a trench width; forming a trench width map using the in-plane distribution of the thickness and the correlation; preparing an epitaxial substrate by forming a stacked semiconductor layer; forming, on the epitaxial substrate, a mask based on the trench width map; forming a trench structure including the semiconductor mesa by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer.

主权项

1. A method for producing an optical semiconductor device, comprising the steps of:
determining a wafer size to make a section arrangement including a plurality of sections in one of which the optical semiconductor device is formed, the optical semiconductor device including a trench and a semiconductor mesa defined by the trench; obtaining an in-plane distribution of a thickness of a resin layer by measuring a thickness of a resin layer formed on a first arrangement structure on a wafer having the wafer size, the first arrangement structure including a plurality of mesas defined by trenches having a predetermined trench width; obtaining a correlation between a thickness of a resin layer and a trench width by measuring a thickness of a resin layer formed on a second arrangement structure on a wafer having the wafer size, the second arrangement structure including a plurality of mesas defined by trenches having trench widths different from each other; forming a trench width map on a wafer having the wafer size by determining a trench width of the trench in the optical semiconductor device by using the in-plane distribution of the thickness and the correlation between the thickness of the resin layer and the trench width; preparing an epitaxial substrate by forming a stacked semiconductor layer on a substrate having the wafer size, the substrate having the section arrangement including the plurality of sections; forming, on the epitaxial substrate, a mask including a pattern for the semiconductor mesa and for the trench of the optical semiconductor device, the trench of the device having a trench width based on the trench width map; forming a trench structure including the semiconductor mesa and the trench by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure, the resin layer being formed on an upper surface and a side surface of the semiconductor mesa; and forming an opening on the semiconductor mesa by etching the resin layer, the upper surface of the semiconductor mesa being exposed through the opening.