Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium

摘要

A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: supplying a raw material gas to a substrate in a process chamber; exhausting the raw material gas remaining in the process chamber through an exhaust line in a state where the supply of the raw material gas is being stopped; supplying an amine-based gas to the substrate in the process chamber; and exhausting the amine-based gas remaining in the process chamber through the exhaust line in a state where the supply of the amine-based gas is being stopped, wherein a degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the act of exhausting the amine-based gas remaining in the process chamber.