| 发明名称 | Lithographic apparatus, distortion determining method, and patterning device | ||
| 摘要 | The invention relates to a lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, apparatus comprising: a device for transmission image detection; and a processor configured and arranged to model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein patterning device has a main imaging field, and a perimeter and apparatus is operable to model higher-order distortions using signals resultant from alignment structures comprised in perimeter and/or in the imaging field. | ||
| 申请公布号 | US8988653(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201012727054 | 申请日期 | 2010.03.18 |
| 申请人 | ASML Netherlands B.V. | 发明人 | Van De Kerkhof Marcus Adrianus;De Kruif Robertus Cornelis Martinus |
| 分类号 | G03B27/68;G03F7/20 | 主分类号 | G03B27/68 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate, wherein said apparatus is operable to measure higher-order distortions and/or image plane deviations of the patterning device, said apparatus comprising: a device for transmission image detection; and a processor configured and arranged to feed-forward model higher-order distortions of the patterning device using signals received from the device for transmission image detection; wherein said patterning device has a main imaging field, and a perimeter and said apparatus is operable to feed-forward model said higher-order distortions using signals resultant from alignment structures comprised in said perimeter and/or in the imaging field. | ||
| 地址 | Veldhoven NL | ||