发明名称 |
Imaging apparatus |
摘要 |
An imaging apparatus, including imaging optical system having a lens group and an aperture stop, and a solid-state image sensor which includes a photoelectric conversion layer made of an organic material and a color filter layer with color filters of two or more colors and a separation wall. The photoelectric conversion layer has a thickness of 0.1 82 m to 1 μm, each of the color filters has a refractive index of 1.5 to 1.8, the separation wall has a width of 0.05 μm to 0.2 μm and a refractive index of 1.22 to 1.34, and the lens group and the solid-state image sensor are disposed such that the relationship between a pixel pitch D (μm) of the sensor and a maximum angle α (°) of a principal ray incident on the sensor is 45≧α≧25.D−20 where D≦2.6 μm. |
申请公布号 |
US8988565(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US201314076827 |
申请日期 |
2013.11.11 |
申请人 |
FUJIFILM Corporation |
发明人 |
Asano Hideki;Tani Takeharu |
分类号 |
H04N9/083;H04N5/335;G02B5/20;G02B13/00;H01L27/146;H04N5/225 |
主分类号 |
H04N9/083 |
代理机构 |
Studebaker & Brackett PC |
代理人 |
Studebaker & Brackett PC |
主权项 |
1. An imaging apparatus, comprising:
an imaging optical system having a lens group and an aperture stop; and a solid-state image sensor for taking an image formed on an imaging surface of the imaging optical system, wherein the solid-state image sensor is a sensor having a plurality of pixels on a substrate and includes a photoelectric conversion layer made of an organic material and a color filter layer disposed above the photoelectric conversion layer with color filters of two or more colors and a transparent separation wall separating each of the color filters of the respective colors, wherein: the photoelectric conversion layer has a thickness of 0.1 μm to 1 μm; each of the color filters of the respective colors has a refractive index of 1.5 to 1.8; the separation wall has a width of 0.05 μm to 0.2 μm; the separation wall has a refractive index of 1.22 to 1.34; and the lens group and the solid-state image sensor are disposed such that the relationship between a pixel pitch D (μm) of the solid-state image sensor and a maximum angle α (°) of a principal ray incident on the solid-state image sensor is 45≧α≧25·D−20 when D≦2.6 μm. |
地址 |
Tokyo JP |