Method and apparatus for programmable heterogeneous integration of stacked semiconductor die

摘要

Method and apparatus for programmable heterogeneous integration of stacked semiconductor die are described. In some examples, a semiconductor device includes a first integrated circuit (IC) die including through-die vias (TDVs); a second IC die vertically stacked with the first IC die, the second IC die including inter-die contacts electrically coupled to the TDVs; the first IC die including heterogeneous power supplies and a mask-programmable interconnect, the mask-programmable interconnect mask-programmed to electrically couple a plurality of the heterogeneous power supplies to the TDVs; and the second IC die including active circuitry, coupled to the inter-die contacts, configured to operate using the plurality of heterogeneous power supplies provided by the TDVs.

主权项

1. A semiconductor device, comprising:
a first integrated circuit (IC) die including through-die vias (TDVs); a second IC die vertically stacked with the first IC die, the second IC die including inter-die contacts electrically coupled to the TDVs; the first IC die including first active circuitry, a mask-programmable interconnect and heterogeneous power supplies, the heterogeneous power supplies configured to provide supply voltages to a plurality of daughter IC dies, the heterogeneous power supplies including at least one via formed between the first active circuitry and the mask-programmable interconnect, the at least one via electrically directly coupled to the first active circuitry, wherein the plurality of daughter IC dies includes the second IC die, and wherein the mask-programmable interconnect electrically couples the heterogeneous power supplies to the TDVs; and the second IC die including second active circuitry, the second active circuitry coupled to the inter-die contacts and to at least a subset of the heterogeneous power supplies through the TDVs.