发明名称 Self-refresh control circuit and memory including the same
摘要 An self-refresh control circuit for controlling a self-refresh operation of a memory device includes a self-refresh control logic block configured to control the memory device to perform the self-refresh operation and an initial refresh control block configured to activate the self-refresh control logic block in an initialization period of the memory device.
申请公布号 US8988961(B2) 申请公布日期 2015.03.24
申请号 US201213525885 申请日期 2012.06.18
申请人 Hynix Semiconductor Inc. 发明人 Hwang Jeong-Tae
分类号 G11C7/00;G11C11/406 主分类号 G11C7/00
代理机构 IP&T Group LLP 代理人 IP&T Group LLP
主权项 1. A self-refresh control circuit for controlling a self-refresh operation of a memory device, comprising: a self-refresh control logic block configured to control the memory device to perform the self-refresh operation; and an initial refresh control block configured to activate the self-refresh control logic block in an initialization period of the memory device, wherein the initial refresh control block comprises: a pulse generation unit configured to generate a reset pulse wherein the reset pulse is activated when a reset signal is deactivated; anda self-refresh period signal generation unit configured to activate a self-refresh period signal in response to an activation of the reset pulse and deactivate the self-refresh period signal in response to the activation of a clock enable signal, wherein the self-refresh control logic block is activated in a period where the self-refresh period signal is activated.
地址 Gyeonggi-do KR