Solid-state image sensor

摘要

A pixel area with a two-dimensional array of pixels (10) each including a photodiode and a memory area (3a) on which memory sections for holding signals produced by the pixels for continuously recordable frames are separately provided on a semiconductor substrate. All the pixels simultaneously perform a photocharge storage operation, and the signals produced by the photocharge storage are extracted in parallel through mutually independent pixel output lines (14). In a plurality of memory sections connected to one pixel output line, a sample-and-hold transistor of a different memory section is turned on for each exposure cycle so as to sequentially hold signals in a capacitor of each memory section. After the continuous imaging is completed, all the pixel are sequentially read. Unlike CCD cameras, the present sensor does not simultaneously drive all the gate loads. Therefore, the sensor consumes less power yet can be driven at high speeds. The separation between the memory area and pixel area prevents signals from deterioration due to an intrusion of excessive photocharges. As a result, the sensor can perform imaging operations at higher speeds than ever before and yet capture images with higher qualities.

主权项

1. A solid-state image sensor comprising:
a) a pixel area in which a plurality of pixels are arranged in a two-dimensional array, each pixel including a photoelectric conversion element for receiving light and producing photocharges; and b) a memory area provided separately from the pixel area and having a plurality of memory sections for holding output signals corresponding to each of the plurality of pixels within the pixel area; wherein one respective pixel output line independently extends from each pixel within the pixel area, each of the plurality of pixels is connected to multiple memory sections of the plurality of memory sections in parallel through the pixel output line.