Conductor structure and method

摘要

A method of forming an interlayer conductor structure. The method includes forming a stack of semiconductor pads coupled to respective active layers for a circuit. The semiconductor pads include outside perimeters each having one side coupled to a respective active layer. Impurities are implanted along the outside perimeters to form outside lower resistance regions on the pads. Openings are then formed in the stack of the semiconductor pads to expose a landing area for interlayer conductors on a corresponding semiconductor pad and to define an inside perimeter on at least one of the semiconductor pads. Inside lower resistance regions are formed along the inside perimeters by implanting impurities for interlayer conductor contacts and configured to overlap and be continuous with the corresponding outside lower resistance region.

主权项

1. A method of forming interconnect contact structures; comprising:
forming a stack of semiconductor pads which are coupled to respective active layers of a circuit, semiconductor pads in the stack having outside perimeters each including at least one side coupled to the respective active layer; forming outside perimeter lower resistance regions along the outside perimeters of the semiconductor pads; forming openings in the stack of semiconductor pads, each opening exposing a landing area on a corresponding semiconductor pad, and defining an inside perimeter on at least one of the semiconductor pads overlying said corresponding semiconductor pad; and forming inside perimeter lower resistance regions along the inside perimeters of the semiconductor pads.