Metal barrier-doped metal contact layer

摘要

A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.

主权项

1. A method for manufacturing a photovoltaic device, the method comprising:
depositing an intrinsic metal layer on a semiconductor absorber layer; sputtering a doped metal contact layer on the intrinsic metal layer, the doped metal contact layer comprising a metal base material and a dopant material, wherein the metal base material is molybdenum, and wherein the dopant material is copper and the doped metal contact layer comprises a copper concentration of about 0.1% to about 10%; and forming a concentration gradient of the dopant material in the intrinsic metal layer by causing diffusion of at least some of the dopant material from the doped metal contact layer.