Apparatus and methods of programming memory cells using adjustable charge state level(s)

摘要

Apparatus and methods are disclosed, including a method of programming involving determining an error rate for the memory cells, and programming the memory cells using a charge state level for a charge state that is based at least in part on the determined error rate.

主权项

1. A method for programming memory cells, the method comprising:
error correcting data in the memory cells with error correcting code; identifying a target error rate based on a tolerance of the error correcting code to errors; determining an observed error rate for the memory cells; and programming data to the memory cells using a charge state level for a charge state that is based at least in part on a relationship between the target error rate and the determined observed error rate such that the charge state level is at least approximately equal to a minimum charge state level that yields the determined observed error rate as no greater than the target error rate.