发明名称 Display device and manufacturing method thereof
摘要 The display device includes a gate electrode, a gate insulating film provided over the gate electrode, a semiconductor film provided over the gate insulating film to overlap with the gate electrode, an island-shaped first insulating film provided over the semiconductor film to overlap with the gate electrode, a first conductive film provided over the semiconductor film, a pair of second conductive films which is provided over the semiconductor film and between which the first insulating film is sandwiched, and a second insulating film provided over the first insulating film, the first conductive film, and the pair of second conductive films. In the second insulating film and the semiconductor film, an opening portion which is positioned between the first conductive film and the one or the other of the pair of second conductive films is provided.
申请公布号 US8988625(B2) 申请公布日期 2015.03.24
申请号 US201213667208 申请日期 2012.11.02
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Yamazaki Shunpei;Koyama Jun
分类号 G02F1/136;H01L27/12;G02F1/1368;G02F1/1362 主分类号 G02F1/136
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A display device comprising: a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; a semiconductor film over the gate electrode with the gate insulating film interposed therebetween; a first insulating film over the gate electrode with the gate insulating film and the semiconductor film interposed therebetween; a source electrode and a drain electrode over the semiconductor film and the first insulating film, wherein the first insulating film is provided between the source electrode and the drain electrode; a first conductive film over the semiconductor film; a second insulating film over the source electrode, the drain electrode, the first insulating film, and the semiconductor film; a pixel electrode over the second insulating film and electrically connected to one of the source electrode and the drain electrode; and a first opening portion in the gate insulating film, the semiconductor film, and the second insulating film, wherein the first opening portion is provided between the first conductive film and one of the source electrode and the drain electrode.
地址 Atsugi-shi, Kanagawa-ken JP