Microelectronic device with isolation trenches extending under an active area

摘要

A microelectronic device is provided, including: a substrate including a first semiconductor layer positioned on a dielectric layer and a second semiconductor layer; and an isolation trench disposed through the first semiconductor layer, the dielectric layer, and a part of the thickness of the second semiconductor layer, including a dielectric material and delimiting, in the first semiconductor layer, a roughly rectangular active area of the device, wherein in said part of the thickness of the second semiconductor layer, at least one portion of the dielectric material is positioned under the active area delimited by at least four side walls of the trench, and two of the at least four side walls are roughly parallel with one another and are positioned under the active area, and the other two of the at least four side walls are orthogonal to said two walls and are not positioned under the active area.

主权项

1. A microelectronic device, comprising:
a substrate including a first semiconductor layer positioned on a dielectric layer, the dielectric layer being positioned on a second semiconductor layer; and at least one isolation trench disposed through the first semiconductor layer, the dielectric layer, and a part of the thickness of the second semiconductor layer, the at least one isolation trench including at least one dielectric material and delimiting, in the first semiconductor layer, at least one active area of the microelectronic device, wherein, in said part of the thickness of the second semiconductor layer,
at least one portion of the at least one dielectric material of the at least one isolation trench is positioned under the at least one active area, the at least one active area being of roughly rectangular shape, and delimited by at least four side walls of the at least one isolation trench, which extend through the first semiconductor layer, the dielectric layer, and said part of the thickness of the second semiconductor layer, andtwo of the at least four side walls, which are roughly parallel with one another, are positioned under the at least one active area, and the other two of the at least four side walls are roughly orthogonal to said two of the at least four side walls and are not positioned under the at least one active area.