Field effect transistor having fin base and at lease one fin protruding from fin base

摘要

Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.

主权项

1. A field effect transistor, comprising:
a source region and a drain region on a substrate; a fin base protruding from a top surface of the substrate; a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region; a gate electrode on the plurality of fin portions; a gate dielectric between the plurality of fin portions and the gate electrode; and a device isolation layer exposing upper portions of the plurality of fin portions and covering the top surface of the substrate adjacent to the fin base, wherein the top surface of the substrate adjacent to the fin base includes a plurality of grooves, and each of the plurality of grooves includes a plurality of convex portions and a plurality of concave portions extending along an extending direction of the plurality of fin portions.