Semiconductor device

摘要

In a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region, an outer end of a surface region of a second conductivity type coupled to a main junction of the second conductivity type in a surface of a drift region of a first conductivity type and having a concentration lower than that of the main junction is located in a middle region between an outer end of the main junction and an outer end of the super-junction structure in the chip peripheral region.

主权项

1. A semiconductor device comprising:
(a) a semiconductor chip having a first main surface provided with a source electrode of a power MOSFET and a second main surface provided with a drain electrode of the power MOSFET; (b) a drift region of a first conductivity type provided in substantially the entire first main surface of the semiconductor chip; (c) a substantially rectangular active cell region provided substantially at a middle portion of the first main surface, peripheral side regions provided outside the active cell region along individual sides of the active cell region, and peripheral corner regions provided outside individual corner portions of the active cell region; (d) a first super-junction structure having a first orientation and provided in substantially the entire surface of the cell region and in the drift region; (e) second and third super-junction structures each having substantially the same width and orientation as those of the first super-junction structure and provided in the drift region of each of the peripheral side regions on both sides of the active cell region in a direction of the first orientation of the first super-junction structure so as to be coupled to the first super-junction structure; (f) fourth and fifth super-junction structures each having an orientation substantially orthogonal to that of the first super-junction structure and provided in the drift region of each of the peripheral side regions on both sides of the active cell region in a direction orthogonal to the first orientation of the first super-junction structure; (g) a main junction region of a second conductivity type which is an outer end portion of the active cell region and provided in a surface of the drift region so as to surround the active cell region; and (h) a corner-portion super-junction structure provided in the drift region in each of the peripheral corner regions, wherein the corner-portion super-junction structure is laid out so as to maintain local charge balance.