Nonvolatile semiconductor memory device and method of fabricating the same

摘要

According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a semiconductor region; a tunnel insulator provided above the semiconductor region; a charge storage insulator provided above the tunnel insulator; a block insulator provided above the charge storage insulator; a control gate electrode provided above the block insulator; and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode, wherein the interface region is constituted with a layered structure including a metal oxide film and a silicon oxide film, the metal oxide film including a metal element selected from aluminum, magnesium, strontium, calcium, lanthanum, tungsten or tantalum.