Vertical type semiconductor devices including oxidation target layers

摘要

A vertical type semiconductor device can include a vertical pillar structure that includes a channel pattern with an outer wall. Horizontal insulating structures can be vertically spaced apart from one another along the vertical pillar structure to define first vertical gaps therebetween at first locations away from the outer wall and to define second vertical gaps therebetween at the outer wall, where the second vertical gaps are wider than the first vertical gaps. Horizontal wordline structures can be conformally located in the first and second vertical gaps between the vertically spaced apart horizontal insulating structures, so that the horizontal wordline structures can be vertically thinner across the first vertical gaps than across the second vertical gaps.

主权项

1. A vertical type semiconductor device comprising:
a pillar structure including a semiconductor pattern and a channel pattern protruding in a first direction, the first direction being a vertical direction relative to an upper surface of a substrate; first word line structures horizontally extending to surround the pillar structure at a facing portion relative to the channel pattern, the first word line structures including a blocking dielectric layer pattern and a metal pattern, a height of the first word line structures being enlarged at a portion making contact with the pillar structure; and a first insulating structure surrounding the pillar structure between the first word line structures in the first direction, the first insulating structure including a first portion having a relatively smaller height and making contact with the pillar structure and a second portion horizontally extended to a side direction of the first portion.